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What is SuperFlash® Technology?

SuperFlash® technology is an innovative and versatile type of NOR Flash memory that utilizes a proprietary split-gate cell architecture to provide superior performance, data retention and reliability over conventional stacked gate Flash. Watch the below webinar to learn how the SuperFlash cell operates differently from a conventional Flash cell: 

Industry's Fastest Erase Times

The unique split-gate cell design allows products with SuperFlash technology to provide the fastest sector, block and chip erase times available. While a typical 64 Mb Flash can take as long as 100 seconds to perform a full chip erase, the equivalent products with SuperFlash technology can complete the same operation in less than 100 ms.

Maximum Chip Erase Time

As shown in the above figure, chip erase times become more significant as the density increases in competing devices. With SuperFlash technology, the chip erase remains extremely fast regardless of density.

“Over-erase” is a condition which affects traditional stacked gate Flash. An over-erased cell creates a leakage current path between the drain and floating gate, which can result in read failures. To combat this effect, stacked gate Flash requires multiple erase pulses, “soft-programming” and erase verification cycles to ensure a tight threshold voltage window of the Flash cell. “Over-erase” and the resulting cell leakage does not affect the split gate cell design of SuperFlash technology because the floating gate is isolated from the drain. Therefore, the additional soft-program and erase verify steps during cell erase are not required with SuperFlash technology. The result is a Flash memory that can perform a full chip erase up to 1,000 times faster than typical Flash.

Why should I care? Faster Erase Times Save Money

Your factories may be wasting valuable time testing Flash memory. SuperFlash memory drastically improves manufacturing throughput, saving test cost and avoiding investment in additional test equipment to meet your customers demand. Stacked gate Flash requires minutes per board whereas SuperFlash only needs seconds. Don’t get caught off guard by this hidden product cost!

An Example Case Study:

Low Cost Flash
High Reliability and Data Retention

SuperFlash technology utilizes a much thicker oxide layer than traditional stacked gate Flash. The thicker oxide layer is much less susceptible to defects and damage which can create a leakage path and eventual cell data loss. Notice that the floating gate of the SuperFlash technology cell also has a hook or notch at the edge. This hook creates a strong electric field which improves the performance and reliability of erase operations.

Conventional Flash and Split Gate SuperFlash Technology Diagrams

Serial NOR Flash Memory (SPI, QSPI / Quad SPI) Products by Density

Parallel NOR Flash Memory Products by Density

Get Started with SuperFlash Technology

Now that you know about how using SuperFlash Technology can save both time and money, find the right SuperFlash memory device for your application. We provide key design considerations to make product selection easy.